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| www..com Pb Free Plating Product ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B G152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 0.3 -0.7A The G152B provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features & On-State Resistance:0.3 L (max) Low &Ultra High Speed Switching Applications & Notebook PCs &Cellular and portable phones &On-board power supplies &Li-ion battery System Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 C 0C Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Symbol VDS VGS ID IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings -20 f 12 -0.7 -2.8 0.5 0.01 -55 ~ +150 Ratings 90 Unit V V A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -20 -0.5 Typ. -0.1 1.5 135 192 5.2 1.36 0.6 5 20 55 70 180 120 60 Max. -1.2 D 100 -10 300 500 10 pF VGS=0V VDS=-10V f=1.0MHz ns VDD=-10V ID=-0.4A VGS=-5V nC Unit V V/ : V S nA uA mL Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-1mA VDS=-10V, ID=-0.4A 12V VGS= D VDS=-20V, VGS=0 VGS=-4.5V, ID=-0.4A VGS=-2.5V, ID=-0.4A ID=-0.7A VDS=-10.0V VGS=-6.0V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. - Typ. - Max. -1.1 Unit V Test Conditions IS=-0.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 : /W when mounted on min. copper pad. 2/4 ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Characteristics Curve Fig 1. Drain Current v.s. Drain-Source Voltage Fig 2. Drain Current v.s. Gate-Source Voltage Fig 3. Drain-Source On-State Resistance v.s. Gate-Source Voltage Fig 4. Drain-Source On-State Resistance v.s. Drain Current Fig 5. Drain-Source On-State Resistance v.s. Ambient Temperature Fig 6. Gate-Source Cut-off Voltage Variance v.s. Ambient Temperature 3/4 ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Fig 7. Capacitance v.s. Drain-Source Voltage Fig 8. Switching Time v.s. Drain Current Fig 9. Gate-Source Voltage v.s. Gate Charge Fig 10. Reverse Drain-Current v.s. Source-Drain Voltage Fig 11. Thermal Resistance v.s. Pulse Width Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4 |
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